LN66F ; Detailed Description. Infrared (IR) Emitter 950nm 1.35V 50mA 13mW/sr @ 50mA 30° ; Datasheet. Datasheet ; Obsolete. This product is no longer manufactured.
Order today, ships today. LN66F – Infrared (IR) Emitter 950nm 1.35V 50mA 13mW/sr @ 50mA 30° from Panasonic Electronic Components.
GaAs Infrared Light Emitting Diode. For light source of remote control systems. Features ○ High-power output, high-efficiency : Ie = 13.0 mW/sr (min.)
Opto-Electronic Device - Light Emitting Diodes - Infared Light Emitting Diodes · LN66F datasheet pdf Panasonic Download LN66F datasheet from. Panasonic, pdf
LN66F. GaAs Infrared Light Emitting Diode. For light source of remote control ... LN66F. Infrared Light Emitting Diodes. Frequency characteristics. 10. 1. 10 –1.
Square D B4.85 / CH Overload Relay Thermal (LN66F) ; Brand. Square D ; Type. Thermal Overload Relay ; Accurate description. 4.9 ; Reasonable shipping cost. 5.0.
s: Color: Amber, Green ; Lens Style/Size: Round with Domed Top, 5mm, T-1 3/4 ; Millicandela Rating: 20mcd Amber, 20mcd Green ; Voltage - Forward (Vf) Typ: 2V ...
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Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ.) Transparent epoxy resin package 13.5±1.0 11.5±1.0 3.6±0.3.
Part #: LN66F. Chat AI.File Size: 41Kbytes. Page: 3 Pages. Description: GaAs Infrared Light Emitting Diode. Manufacturer: Panasonic Semiconductor.