2N5770. PD. Total Device Dissipation. Derate above 25°C. 350. 2.8. mW. mW/°C. RθJC. Thermal Resistance, Junction ... 2N5770_D27Z 2N5770_D26Z 2N5770 2N5770_Q ...
2N5770. TO-92. NPN RF Transistor. This device is designed for use as RF amplifiers ... 2N5770. Derate above 25°C. 2.8. Thermal Resistance, J unction to Case. 1 25.
2N5770 Transistor Datasheet pdf, 2N5770 Equivalent. Parameters and Characteristics.
The CP317X-2N5770 is a silicon NPN RF transistor designed for low noise, high frequency amplifier and high output oscillator applications. MECHANICAL ...