Electrical Specifications, TA = 25°C. Symbol. Parameters and Test Conditions[1]. Units Min. Typ. Max. NFO. Optimum Noise Figure: VCE = 2 V, IDS = 25 mA.

The ATF-10100 is a high performance gallium arsenide Schottky barrier-gate field effect transistor chip. Its premium noise figure makes this device appropriate ...

This GaAs FET device has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based ...

BG Full Synthetic ATF. PN 314. Full synthetic fluid for use in automatic transmissions. Provides superior anti-wear protection and outstanding corrosion control ...

This GaAs FET device ATF-10100 has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based ...

Jan 10, 2015 · ATF-10100: 0.5-12 GHz Low Noise Gallium Arsenide FET.

ATF-10100 - 0.5-12 GHz Low Noise Gallium Arsenide FET ; AA028N1-00, 240 GHz GaAs MMIC Low Noise Amplifier GT 14C 10#12 4#16 PIN PLUG 24-30 GHz GaAs MMIC Low ...

0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS =2V,IDS␣ =␣ 25mA ...

Part No. ATF-10100 ATF-10100-GP3. Description, 0.5-12 GHz Low Noise Gallium Arsenide FET. File Size, 46.17K / 4 Page. Maker, Agilent (Hewlett-Packard)

Oct 1, 1999 · ATF-10100, GaAs field effect transistor chip, none (packaged: ATF-10136) ; ATF-10170, ceramic-packaged GaAs field effect transistor, ATF-10136.