Description: Each device in the OP165 and OP166 series is a high intensity gallium arsenide infrared emitting diode (GaAs) that is molded.
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OP166B ; Radiant Intensity, 2.2 mW/cm2 ; If - Forward Current, 20 mA ; Vf - Forward Voltage, 1.6 V ; Power Rating, 100 mW ; Minimum Operating Temperature, - 40 C.
€1.02
Specifications ; Fall Time: 500 ns ; Illumination Colour: Infrared ; Lens Shape: Dome ; Product Type: IR Emitters (IR LEDs).
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High intensity gallium arsenide range of plastic infrared emitting diodes from Optek. Constructed from a clear epoxy package, with either a small dome or flat ...
Each device in the OP165and OP166 series is a high intensity gallium arsenide infrared emitting diode (GaAIAs) that is molded in an IR transmissive clear or ...
Description: Each device in the OP165 and OP166 series is a high intensity gallium arsenide infrared emitting diode (GaAIAs).