135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features and benefits. Easy power control; Integrated ESD ...
Missing: 2C112 | Show results with:2C112
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BLF6G10-135RN,112 ; Technology. LDMOS ; Frequency. 871.5MHz ~ 891.5MHz ; Gain. 21dB ; Voltage - Test. 28 V ; Current Rating (Amps). 32A.
Missing: 2C112 | Show results with:2C112
BLF6G10-45,112. Manufacturer No: BLF6G10-45,112. Tiny WHSL ... BLF6G10-45%2C112-Ampleon-datasheet-12551898.pdf ... 135RN,112Ampleon USA Inc. SOT-502A. RF FET LDMOS ...
BLF6G10-135RN,112 Ampleon are available at Brilltron. Brilltron offers inventory, pricing & datasheets for BLF6G10-135RN,112 Discrete Semiconductor ...
Missing: 2C112 | Show results with:2C112
BLF6G10-135RN,112 Specifications: Transistor Type: LDMOS ; Voltage - Rated: 65V ; Current Rating: 32A ; Noise Figure: - ; Frequency: 871.5MHz ~ 891.5MHz ...
Missing: 2C112 | Show results with:2C112
45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features and benefits. Easy power control; Integrated ESD ...
Missing: 135RN% 2C112
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