Jun 19, 2007 · The BLF4G10LS-160 is capable of withstanding a load mismatch corresponding to ... BLF4G10LS-160 BLF4G10LS-160,112.
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Specifications ; Transistor Polarity: N-Channel ; Technology: Si ; Id - Continuous Drain Current: 15 A ; Vds - Drain-Source Breakdown Voltage: 65 V.
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Part #: BLF4G10LS-160. Download. File Size: 132Kbytes. Page: 15 Pages. Description: UHF power LDMOS transistor. Manufacturer: NXP Semiconductors.
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Voltage - Rated DC, 600V ; Terminal Position, BOTTOM ; Peak Reflow Temperature (Cel), 260 ; Current Rating, 1.5A.
BLF4G10LS160, 0, 13, 13, 19,571. BLF4G10120, 0, 10, 11, 71,825. BLF4G10160, 0, 7, 7, 49,088. BLF4G10S120, 0, 3, 3, 1,336. BLF4G10LS-110, 0, 3, 3, 4,081.
6 days ago · Delivery Time ; Package / Case, 20-VQFN Exposed Pad ; Number of Pins, 20 ; Weight, 69.994973mg ; Operating Temperature, -55°C~125°C.
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