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APTM50H15FT1G ; Mounting Type. Chassis Mount ; Package / Case. SP1 ; Supplier Device Package. SP1 ; Base Product Number. APTM50 ; Link. Datasheets. APTM50H15UT1G.
Product Features · Configuration: Full bridge · VDSS (V): 500 · RDSon (mR) typ: 150 · Current (A) Tc=80C: 19 · Silicon type: FREDFET 8 · Package: SP1F.
APTM50H15UT1G APTM50H15UT1G-ND. Mounting Type: Chassis Mount. Input Capacitance (Ciss) @ Vds: 5448pF @ 25V. Gate Charge (Qg) @ Vgs: 170nC @ 10V. Family: FETs.
Мост. APTM50H15UT1G. APTM50H15UT1G-Rev0. PDF, 143 KB. Получить Консультацию. Технические характеристики. Характеристика, Значение. VDss, В, 500. ID, А, 19. RDS( ...
APTM50H15UT1G · High-Voltage Power Discretes and Modules. Información ambiental. Microchip CA Prop65 · Microchip REACH · Microchip RoHS. Ensamble/origen PCN ...
APTM50H15UT1G : 25 A, 500 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 ...
APTM50H15UT1G : 25 A, 500 V, 0.18 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET. s: Polarity: N-Channel ; MOSFET Operating Mode: Enhancement ; V(BR)DSS: 500 ...
$68.28
Specifications ; Rds On - Drain-Source Resistance: 130 mOhms ; Rise Time: 35 ns ; Factory Pack Quantity: Factory Pack Quantity: 1 ; Subcategory: Discrete ...
Поставка APTM50H15UT1G модуль IGBT Microsemi по низким ценам, склад. Гарантия качества.
Description: MOSFET 4N-CH 500V 25A SP1 ; Packaging: Bulk ; Package / Case: SP1 ; Mounting Type: Chassis Mount ; Configuration: 4 N-Channel (Full Bridge)