Manufacturer | Part # | Datasheet | Description |
Siemens Semiconductor G... |
BCR22PN
|
62Kb/5P
|
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
|
Infineon Technologies A... |
BCR22PN
|
124Kb/5P
|
NPN/PNP Silicon Digital Transistor Array
Dec-13-2001
|
BCR22PN
|
141Kb/7P
|
NPN/PNP Silicon Digital Transistor Array
2007-07-31
|
BCR22PNH6327
|
533Kb/7P
|
NPN/PNP Silicon Digital Transistor Array
2011-07-28
|
BCR22PN
|
141Kb/7P
|
NPN/PNP Silicon Digital Transistor Array
2007-07-31
|
Search Partnumber :
Start with "BCR22PN" -
Total : 99 ( 1/5 Page) |
Infineon Technologies A... |
BCR22PNH6327
|
533Kb/7P |
NPN/PNP Silicon Digital Transistor Array
2011-07-28 |
BCR22PN
|
141Kb/7P |
NPN/PNP Silicon Digital Transistor Array
2007-07-31 |
Mitsubishi Electric Sem... |
BCR20A
|
91Kb/5P |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
BCR20AM
|
51Kb/5P |
MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Powerex Power Semicondu... |
BCR20AM
|
72Kb/4P |
Triac 20 Ampere/400-600 Volts
|
BCR20AM-12
|
72Kb/4P |
Triac 20 Ampere/400-600 Volts
|
BCR20AM-12L
|
72Kb/4P |
Triac 20 Ampere/400-600 Volts
|
Renesas Technology Corp |
BCR20AM-12LA
|
107Kb/7P |
Triac Medium Power Use
|
BCR20AM-12LA-A8
|
107Kb/7P |
Triac Medium Power Use
|
BCR20AM-12LB
|
118Kb/8P |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C)
|
BCR20AM-12LB-A8
|
118Kb/8P |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150째C)
|
Powerex Power Semicondu... |
BCR20AM-8
|
72Kb/4P |
Triac 20 Ampere/400-600 Volts
|
BCR20AM-8L
|
72Kb/4P |
Triac 20 Ampere/400-600 Volts
|
Mitsubishi Electric Sem... |
BCR20B
|
91Kb/5P |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|
BCR20C
|
91Kb/5P |
MEDIUM POWER USE A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
|