VTE1163. PACKAGE DIMENSIONS inch (mm). CASE 24 TO-46 HERMETIC (Lensed). CHIP SIZE: .018" x ... Max. VTE1163. 22. 28. 36. 6.4. 285. 110. 1.0. 2.8. 3.5. ±10°.

018" x . 018" This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for ...

This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.

VTE1163 · PERKINELMER-VTE1163 Datasheet 28Kb/1P, GaAlAs Infrared Emitting Diodes. Search Partnumber : Start with "VTE11" - Total : 58 ( 1/3 Page). logo

VTE1163, GaAlAs Infrared Emitting Diodes. GaAlAs Infrared Emitting Diodes TO-46 Lensed Package — 880 nm VTE1163 PACKAGE DIMENSIONS inch (mm) DESCRIPTION CASE ...

mm. mW/sr min. PO mW typ. Pulsed typ. max. θ1/2 typ. VTE1063. 3.8. 5. 36. 6.4. 49. 80. 1000. 2.8. 3.5. ±35˚. VTE1163. 22. 28. 36. 6.4. 285. 110. 1000. 2.8. 3.5.

VTE1163 GaAlAs Infrared Emitting Diode. Item: VTE1163 GaAlAs Infrared Emitting Diode. Documents: VTE1163_PerkinElmerOptoelectronics.pdf. Location: 502L ...

DESCRIPTION This narrow beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for ...

VTE1163 GaAlAs Infrared Emitting Diode. Item: VTE1163 GaAlAs Infrared ... PhysicsID:VTE1163. Category:Light Sensors · Traceable Mini-Thermometer. Item ...