Part #: TC55VBM316AFTN. Download. File Size: 216Kbytes. Page: 15 Pages. Description: TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS.
The TC55VBM316AFTN/ASTN is a 8,388,608-bit static random access memory (SRAM) organized as 524,288 w... Features, • • • • • • • Low-power dissipation Operating: ...
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TC55VBM316AFTN - 524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS ; PART ...
TC55VBM316AFTN55 Specifications: Memory Type: SRAM ; Memory Size: 8M (512K x 16) ; Speed: 55ns ; Interface: Parallel (Byte-wide) ; Package / Case: 48-TFSOP ...
TC55VBM316 series datasheets. Manufacturer: Toshiba. TC55VBM316AFTN, TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS, Datasheet*).
TC55VBM316 Datasheet. 216Kb/15P. Part #: TC55VBM316AFTN. Manufacturer: Toshiba Semiconductor. Description: TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT ...
The TC55VBM316AFTN-55 electronic component is brought into production by TOSHIBA, included in Other Components. Each device is available in a small TSOP-48 ...
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The TC55VBM316ASTN55 parts manufactured by TOSHIBA are available for purchase at Jotrin Electronics. Here you can find various types and values of ...
