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0.25µm 3/4 layer metalization CMOS process A maximum of 2,519,604 gates (2 input NAND gate equivalent) Internal gates: 107ps (2.5V Typ), ps (2.0V Typ) (2-input ...
S1L60000 Series ; AL3-Series, S1L60093, S1L60173, S1L60283, S1L60403 ; AL4-Series, S1L60094, S1L60174, S1L60284, S1L60404 ; Raw Gates, 99.2k, 171.8k, 284.4k, 400.3 ...
0.25μm CMOS, using 3-, 4-layer interconnect process. ○ 107 ps internal gate delay at 2.5V, 2-input NAND Typ. ○ Low power consumption (Internal cell: 2.5V ...
S1L60403. S1L60593. S1L60833. S1L61233. S1L61583. S1L61903. S1L62513. Model. Name. 4-layer. Metallization. S1L60094. S1L60174. S1L60284. S1L60404. S1L60594.
S1L60403 / 60593 / 60833. 330. 270. µA. S1L61233 / 61583. 630. 510. µA. S1L61903 / 62513. 1000. 800. µA. Quiescent Current (For Dual Power Supplies). (Tj = 85oC).
ASICs · SLA40000 - High Density Gate Array. 39.99Kb • 2 pages · S1L60093 - HIGH DENSITY GATE ARRAY. 163.66Kb • 12 pages · S1L60403 - HIGH DENSITY GATE ARRAY.
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S1L60403 : Gate Arrays. SED1906 : LCD Drivers TFT Drivers. SLA913F : High Speed, high Integration gate Array. TF-330C : SAW Filter FOR Tpms, RKE, Japan ARIB ...
S1L60403. S1L60593. S1L60833. S1L61233. S1L61583. S1L61903. S1L62513. 4-layer. Metallization. S1L60094. S1L60174. S1L60284. S1L60404. S1L60594. S1L60834.
Sep 26, 2022 · ... S1L60403 、 S1L60404 、 S1L60593 、 S1L60594 、 S1L60833 、 S1L60834 、 S1L61233 、 S1L61234 、 S1L61583 、 S1L61584 、 S1L61903 、 S1L61904 ...
S1L60403. S1L60593. S1L60833. S1L61233. S1L61583. S1L61903. S1L62513. 4-layer. Metallization. S1L60094. S1L60174. S1L60284. S1L60404. S1L60594. S1L60834.