QRB1113 ; Part Status. Obsolete ; Sensing Distance. 0.150" (3.81mm) ; Sensing Method. Reflective ; Voltage - Collector Emitter Breakdown (Max). 30 V.

The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic ...

Mar 5, 2002 · The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converg-.

The QRB1113/1114 consists of an infrared emitting diode and an NPN silicon phototransistor mounted side by side on a converging optical axis in a black plastic ...

View QRB1113-14 by onsemi datasheet for technical specifications, dimensions and more at DigiKey.

QRB1113 onsemi / Fairchild Optical Switches, Reflective, Phototransistor Output REFLECTIVE SENSOR datasheet, inventory & pricing.

QRB1113 ; Sensing Distance, 0.150" (3.81mm) ; Sensing Method, Reflective ; Voltage - Collector Emitter Breakdown (Max), 30V ; Current - Collector (Ic) (Max), 20mA.

QRB1113 ; Forward Voltage, 1.7V ; Input Current, 50mA ; Lead Free, Lead Free ; Max Collector Current, 20mA ; Max Operating Temperature, 85°C.

Jul 19, 2014 · QRB1113/QRB1114 Phototransistor Reflective Object Sensor.

Manufacturer Part No. QRB1113. Manufacturer: ONSEMI. Order Code: 1467856. Sensor Output Type: Phototransistor. Sensor Mounting:.