... PTF180901E datasheet. PTF180901E manufactured by: Infineon, GSM/EDGE RF Power FET · PTF180901E datasheet pdf Infineon Download PTF180901E datasheet from
This device operates at 47% efficiency with 13.5 dB of gain and produces 115 W, P -1dB . This high-gain high-efficiency device is ideal to power your amplifier ...
Quantity, Pricing, Manufacturer, Pictures, and DataSheets for IGBT part PTF180901E INFINEON.
The PTF180901. One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS bands. This device operates at 47%.
Partname: PTF180901E. Description: GSM/EDGE RF Power FET. Manufacturer: Infineon Technologies AG. Datasheet: PDF (169K). Click here to download *).
The PTF180901E-A parts manufactured by INFINEON are available for purchase at Jotrin Electronics. Here you can find various types and values of electronic ...
PTF180901E Gsm/edge RF Power Fet. PTF181301 Ldmos RF Power Field Effect Transistor 130 w, 1805-1880 MHZ. PTF191601 Ldmos RF Power Field Effect Transistor 160 ...
The PTF180601 is a 60 W, internally matched GOLDMOS FET intended for EDGE applications in the DCS/PCS Band. Full gold metallization ensures excellent device ...
Product Brief PTF180901 GSM/EDGE RF Power FET The PTF180901 One of our new line of GSM/EDGE/CDMA2000 devices, the PTF180901 is optimized for the DCS and PCS ...
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The Infineon Technologies PTFA081501E/1 is a radio frequency field-effect transistor designed for various applications. The component is part of the RFFETs ...