105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ. 0.75 kΩ • Satisfactory linearity of GaAs hall voltage with respect to the magnetic field • Small ...
GaAs Hall Devices OH10010 GaAs Hall Device Magnetic sensor I Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ.
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GaAs Hall Devices OH10010 GaAs Hall Device Magnetic sensor I Features • Hall voltage: typ. 105 mV (VC = 6 V, B = 0.1 T) • Input resistance: typ.
□Features •Hall voltage: typ. 105mV (VC = 6V, B = 0.1T) •Input resistance: typ. 0.75 kΩ •Satisfactory linearity of GaAs hall voltage with respect to the ...