NE5511279A-T1-A CEL RF MOSFET Transistors UHF Band RF Power datasheet, inventory, & pricing.
DESCRIPTION. The NE5511279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 7.5 V Radio ...
The NE5511279A RF Power MOSFET is only supported for customers who have already adopted these products.
Order today, ships today. NE5511279A-T1-A – RF Mosfet 7.5 V 400 mA 900MHz 15dB 40dBm 79A from CEL. Pricing and Availability on millions of electronic ...
$55.47
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Part #: NE5511279A-T1-A. Download. File Size: 296Kbytes. Page: 4 Pages. Description: 7.5 V UHF BAND RF POWER SILICON LD-MOS FET.
Part #: NE5511279A-T1. Download. File Size: 99Kbytes. Page: 3 Pages. Description: NECS 7.5 V UHF BAND RF POWER SILICON LD-MOS FET. Manufacturer: NEC.
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Description: The NE5511279A is a low-noise, high-gain, wide-bandwidth operational amplifier from NEC. Features: Low noise: 2.5nV/√Hz High gain: 100dB Wide ...
NE5511279A-T1A-A - 7.5 V UHF BAND RF POWER SILICON LD-MOS FET ; Part No. NE5511279A-T1A-A NE5511279A-T1-A ; Description, 7.5 V UHF BAND RF POWER SILICON LD-MOS ...
NE5511279A-A CEL, NE5511279A-A Datasheet - Page 7 - Elcodis.com
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Specifications of NE5511279A-A ; Transistor Type. LDMOS. Frequency. 900MHz ; Gain. 15dB. Voltage - Rated. 20V ; Current Rating. 3A. Current - Test. 400mA ; Voltage ...