May 1, 1994 · NDP708B NDP708BE. NDB708B NDB708BE. Units. VDSS. Drain-Source Voltage. 80. V. VDGR. Drain-Gate Voltage (RGS < 1 MΩ).

These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high ...

NDB708AE - N-Channel Enhancement Mode Field Effect Transistor ; File Size, 73.76K / 6 Page ; Maker, Fairchild Semiconductor ; Homepage, http://www.fairchildsemi.

IDS, 31A. UGS, 10V. RDS(ON), 22mΩ. Ptot, 150W. fT, -. the NDB708AE is a silicon N channel DMOS power MOSFET. Picture: -. Source: NS National Semiconductor.

NDB708A MOSFET. Datasheet pdf. Equivalent. Type Designator: NDB708A. Type of Transistor: MOSFET. Type of Control Channel: N -Channel. Maximum Power Dissipation ...

Quick Details ; Supply Voltage: Standard ; Package: standard ; Model Number: NDB708AE ; Dissipation Power: Standard ; Application: VCD/DVD Player.

Features 60 and 54A, 80V. RDS(ON) = 0.022 and 0.025Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode ...

No Preview Available ! NDP708AE Hoja de datos, Descripción, Manual. May 1994. NDP708A / NDP708AE / NDP708B / NDP708BE. NDB708A / NDB708AE / NDB708B / NDB708BE.

Download Fairchild Semiconductor NDB708AE pdf datasheet file.