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Proven gold based metallization systems and nitride passivation assure a rugged, reliable device. Page 2. 5-68. ATF-26836 Typical Performance, TA = 25°C. ATF- ...
The ATF-26836 is a high performance gallium arsenide Schottky barrier-gate field effect transistor housed in a cost effective microstrip package. This device is ...
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KSP56TA. PNP Epitaxial Silicon Transistor; Package: TO-92; No of Pins: 3; Container: Ammo. SA8.5A-E3/4. MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS ...
... ATF-26836). Order code: ATF-26884. /. Category: Transistors - RF FET and GaAs-FET. Specifications. Type: GaAs-FET. Drain-source voltage (Vds):. 7 V. Gate-source ...
The is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed ...
Jan 26, 2015 · ATF-26836: 2-16 GHz General Purpose Gallium Arsenide FET.
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(Best quality) ATF-26836 ; Send inquiry. Chat now ; Trade Assurance. Built-in order protection service in alibaba.com. Product quality. On-time shipment. More on ...
ATF-26836 Datasheet(PDF) 4 Page - Agilent(Hewlett-Packard) ; Part #, ATF-26836 ; Description, 2-16 GHz General Purpose Gallium Arsenide FET ; Download, 4 Pages.
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