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The ATF-13100 is a high perfor- mance gallium arsenide Schottky ... See. MEASUREMENTS section for more information. ATF-13100 Typical Performance, TA = 25°C.
The ATF-13100 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor chip. This device is designed for use in low noise, wideband ...
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250 microns. Proven gold based metallization systems and nitride ...
Apr 21, 2014 · ATF-13100: 2-18 GHz Low Noise Gallium Arsenide FET · TAGS · gallium · arsenide · associated · mounting · optimum · voltage · output ...
Partname: ATF13100. Description: UHF/Microwave FETs. Manufacturer: Package: N/A. Datasheet: PDF (72.4K). Click here to download · Click here to download ATF13100 ...
Part No. ATF-13100 ATF-13100-GP3. Description, 2-18 GHz Low Noise Gallium Arsenide FET(2 ... [ATF-13100 ATF-13100-GP3 Datasheet PDF Downlaod from Maxim4U.com ] ...
2–18 GHz Low Noise Gallium Arsenide FET Technical Data ATF-13100 Features Low Noise Figure: 1.1 dB Typical at 12 GHz High Associated Gain: 9.5 dB Typical at ...
Oct 1, 1999 · ATF-13100 (obsolete), 1st stg, 1.2 max, 9.0 min, chip, pkg dwg, use ATF-13336. space. ATF-13135 (obsolete), 1st stg, 1.4 max, 8.5 min, micro-x ...
Partname: ATF-13100-GP3. Description: 2-18GHz low noise gallium arsenide FET. Manufacturer: Package: --. Datasheet: PDF (43K). Click here to download *) ...
ATF-13136-TR1S Datasheet. Part #: ATF-13100. Datasheet: 43Kb/3P. Manufacturer: Agilent(Hewlett-Packard). Description: 2-18 GHz Low Noise Gallium Arsenide ...