Electrical Specifications, TA = 25°C. Symbol. Parameters and Test Conditions[1]. Units Min. Typ. Max. NFO. Optimum Noise Figure: VCE = 2 V, IDS = 25 mA.
BG Full Synthetic ATF. PN 314. Full synthetic fluid for use in automatic transmissions. Provides superior anti-wear protection and outstanding corrosion control ...
This GaAs FET device ATF-10100 has a nominal 0.3 micron gate length interconnects between drain fingers. Total gate periphery is 500 microns. Proven gold based ...
Jan 10, 2015 · ATF-10100: 0.5-12 GHz Low Noise Gallium Arsenide FET.
0.5 – 12 GHz Low Noise Gallium Arsenide FET Technical Data ATF-10100 Features • Low Noise Figure: 0.5 dB Typical at 4 GHz • Low Bias: VDS =2V,IDS␣ =␣ 25mA ...
Part No. ATF-10100 ATF-10100-GP3. Description, 0.5-12 GHz Low Noise Gallium Arsenide FET. File Size, 46.17K / 4 Page. Maker, Agilent (Hewlett-Packard)
Oct 1, 1999 · ATF-10100, GaAs field effect transistor chip, none (packaged: ATF-10136) ; ATF-10170, ceramic-packaged GaAs field effect transistor, ATF-10136.