POWER MOS IV 500V 52A 0.080 Ohm, APT50M80JLC datasheet pdf Advanced Power Technology Download APT50M80JLC datasheet from. Advanced Power Technology, pdf

This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through ...

Parameter. Drain-Source Voltage. Continuous Drain Current @ TC = 25°C. Pulsed Drain Current 1. Gate-Source Voltage Continuous. Gate-Source Voltage Transient.

APT50M80JLC 500V 52A 0.080 W S G D S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power ...

Quick Details ; D/C: NEWEST ; Package: IGBT MODULE ; Part number: APT50M80JLC ; Model Number: APT50M80JLC ; SHIPPING: DHL\UPS\Fedex\TNT\EMS\POST.

Specifications Symbol Parameter APT50M80JLC UNIT VDSS Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25°C 52 Amps IDM Pulsed Drain ...

APT50M80JLC 500V 52A 0.080 W S G D S POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs ...

Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. APT50M80JLC · ADPOW-APT50M80JLC Datasheet 35Kb / ...

APT50M50JLL (#73946) ; Drain Current (dc), I ; 71 ; A. Alphanumeric Parameter, Value ; Value. MOSFET Type, N-Channel. Quality Level, - ; N-Channel. Quality Level, - ...

APT50M80JLC SPC, CIRCUITO, LA FUNCIóN. Nombre de la pieza: APT50M80JLC. Fabricante: Embalaje: Descripción: Pins: Temperatura: Min °C | Max °C. Tamaño: KB.