Order today, ships today. NESG3031M05-EVNF58 – - NESG3031M05@5.8GHz Transistor 5.8GHz Evaluation Board from CEL. Pricing and Availability on millions of ...
FEATURES. • The device is an ideal choice for low noise, high-gain amplification. NF = 0.6 dB TYP., Ga = 16.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.4 GHz.
NESG3031M05-EVNF58 CEL RF Bipolar Transistors For NESG3031M05-A Noise Fig at 5.8 GHz datasheet, inventory & pricing.
CEL NESG3031M05-EVNF58-A (NESG3031M05EVNF58A): RF Bipolar Transistors For NESG3031M05-A Noise Fig at 5.8 GHz.
Features, Applications. NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG). FEATURES.
CEL NESG3031M05-EVNF58 technical specifications, attributes, parameters and parts with similar specifications to CEL NESG3031M05-EVNF58. Part Status. Obsolete.
Apr 1, 2010 · NESG3031M05. NESG3031M05-A. 50 pcs. (Non reel). NESG3031M05-T1 NESG3031M05-T1-A. Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG). (Pb ...
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Description: NESG3031M05-EVNF58-A datasheet pdf and RF Evaluation and Development Kits, Boards product details from CEL stock available at richard.
NESG3031 related parts results 10, find more NESG3031 pirce, stock and datasheet PDF.
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