Designed for CDMA base station applications with frequencies from 1930 to. 1990 MHz. Can be used in Class AB and Class C for all typical cellular base.
The MRF7S19170HR3 and MRF7S19170HSR3 are designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and ...
Part #, MRF7S19170HR3. Download, MRF7S19170HR3 Click to download. File Size, 413.92 Kbytes. Page, 13 Pages. Manufacturer, FREESCALE [Freescale Semiconductor ...
In stock
Buy 100%Original: MRF7S19170H MRF7S19170HS MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR5 MRF7S19170HSR5 [ FET RF 65V 17.2dB 50W 1.99GHZ at Aliexpress for .
MRF7S19170HR3 RF Power Field Effect Transistors Designed for CDMA base station applications with frequencies from 1805 to 1880 MHz.
MRF7S19170H MRF7S19170HR3 - [1930-1990MHz 50W 28V SINGLE W-CDMA ] LATERAL N-CHANNEL RF POWER MOSFET TRANSISTOR. $24.00. MOQ: 1 piece. Contact supplier ...
MRF7S19170HR3 Datasheet(PDF) 10 Page - Freescale Semiconductor, Inc ; Description, RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs.
PDF MRF7S19170HR3 Data sheet ( Hoja de datos ) · Freescale Semiconductor · Technical Data · www.DataSheet4U.com · RF Power Field Effect Transistors · N - Channel ...
The MRF7S19170HR3 from FREESCALE manufacturer is a High-Frequency Tubes with RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs ...
