Order today, ships today. LNA2903L – Infrared (IR) Emitter 950nm 1.4V 100mA 9mW/sr @ 50mA 40° T 1 3/4 from Panasonic Electronic Components.

LNA2903L (LN66A). GaAs Infrared Light Emitting Diode. For optical control systems. Features. High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted ...

LNA2903L ; Current DC Forward If Max; 100mA ; Orientation; Top View ; Wavelength; 950nm ; Viewing Angle; 40° ; Voltage Forward Vf Typ; 1.4V ...

LNA2903L Panasonic datasheet PDF, 5 pages, view LNA2903L Specifications online, Infrared LED, 5mm, 1Element, 950nm, PLASTIC, LT5RR102-001, 2Pin.

Features, Applications. High-power output, high-efficiency = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power ...

LNA2903L. Infrared Light Emitting Diodes. IF — Ta. 120. 100. 80. 60. 40. 20. Ambient temperature Ta (˚C ). Allowable forward current I. F. (mA). 0. 20. 40. 60.

LNA2903 Datasheet - GaAs Infrared Light Emitting Diodes from Panasonic (Matsushita)

Symbol elementu: LNA2903L. Pozostałe symbole: (LN66A). Opis: GaAs Infrared Light Emitting Diode. Pobierz: LNA2903L.pdf. Rozmiar pliku: 59 KB / 4 stron.

Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 20 deg. (typ.) ...