VDSS. TJ. = 25°C to 150°C. 1000. V. VDGR. TJ. = 25°C to 150°C; RGS = 1 MΩ. 1000. V. VGS. Continuous. ±20. V. VGSM. Transient.
IXFT6N100Q MOSFET. Datasheet pdf. Equivalent. Type Designator: IXFT6N100Q Type of Transistor: MOSFET Type of Control Channel: N -Channel Maximum ...
The IXFT6N100Q is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This ...
IXFT6N100Q. MOSFET N-CH 1000V 6A TO268. Available Quantity: 0. Unit Price: 0. Co-Browse. By using the Co-Browse feature, you are agreeing to allow a support ...
Part No. IXFH6N100Q IXFT6N100Q ; Description, Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Q-Class ; File Size, 117.16K / 2 Page ; Maker
IXFT6N100Q · IXYS-IXFT6N100Q Datasheet 124Kb / 2P, HiPerFET Power MOSFETs Q-Class. More results. Similar Description - IXFT6N100F. Manufacturer, Part # ...