IRF5810TRPBF ; Gate Charge (Qg) (Max) @ Vgs. 9.6nC @ 4.5V ; Input Capacitance (Ciss) (Max) @ Vds. 650pF @ 16V ; Power - Max. 960mW ; Operating Temperature. -55°C ~ ...
FEATURED PRODUCTS. INFINEON ... High-performance solution for power electronics applications. ... Helps EV makers create 11kW and 22kW bidirectional onboard ...
Part #: IRF5810TRPBF. Download. File Size: 204Kbytes. Page: 9 Pages. Description: Ultra Low On-Resistance. Manufacturer: International Rectifier.
Specifications ; Vds - Drain-Source Breakdown Voltage: 20 V ; Id - Continuous Drain Current: 2.9 A ; Vgs - Gate-Source Voltage: - 12 V, + 12 V ; Qg - Gate Charge:
Infineon IRF5810TRPBF. MOSFET, Power,Dual P-Ch,VDSS -20V,RDS(ON) 90 Milliohms,ID -2.9A,TSOP-6,PD 0.96W. Mfr. Part #: IRF5810TRPBF / RS Stock #: 70017677.
Jan 13, 2003 · This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required ...
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IRF5810TRPBF. International Rectifier. MOSFET, DUAL, P, TSOP-6. 3. Part Number ... IRF5810TRPBF. D# IRF5810TRPBFTR-ND. Infineon Technologies AG. MOSFET 2P-CH 20V ...
INTERNATIONAL RECTIFIER IRF5810TRPBF | Transistor: P-MOSFET; unipolar; -20V; -2.9A; 960mW; TSOP6 - This product is available in Transfer Multisort ...
These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon ...
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Infineon IRF5810TRPBF ; Vgs - Gate-Source Voltage: - 12 V, + 12 V ; Qg - Gate Charge: 6.4 nC ; Pd - Power Dissipation: 960 mW ; Packaging: MouseReel ; Brand: ...