FDS6680A/D. FDS6680A. Single N-Channel, Logic Level, PowerTrench. ®. MOSFET. General Description. This N-Channel Logic Level MOSFET is produced using. ON ...
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FDS6680A ; Input Capacitance (Ciss) (Max) @ Vds. 1620 pF @ 15 V ; FET Feature. - ; Power Dissipation (Max). 2.5W (Ta) ; Operating Temperature. -55°C ~ 150°C (TJ).
Body Diode Forward Voltage Variation with Source Current and Temperature. FDS6680A. Page 4. FDS6680A Rev F2(W). Typical Characteristics.
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Specifications ; Vds - Drain-Source Breakdown Voltage: 30 V ; Id - Continuous Drain Current: 12.5 A ; Rds On - Drain-Source Resistance: 9.5 mOhms ; Vgs - Gate- ...
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This N-Channel Logic Level MOSFET is produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance ...
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This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the ...
$0.40
The FDS6680A is a 30 V 9.5 mΩ N-Channel Logic Level MOSFET is produced using advanced PowerTrench process that has been especially tailored to minimize the on- ...
FDS6680A FDS6680 MOSFET N-CHANNEL 11.5A 30V ; SKU. A-098 ; In stock Qty Available: 3988888 ; Quick Overview. Get It Fast - Same Day Shipping ; Datasheet: Click Here
Oct 1, 2001 · This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored ...