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Specifications ; Vds - Drain-Source Breakdown Voltage: 50 V ; Id - Continuous Drain Current: 280 mA ; Rds On - Drain-Source Resistance: 2 Ohms ; Vgs - Gate-Source ...
DMN5L06VK-7 Diodes Incorporated | Discrete Semiconductor Products
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$0.46
DMN5L06VK-7 ; Configuration. 2 N-Channel (Dual) ; FET Feature. Logic Level Gate ; Drain to Source Voltage (Vdss). 50V ; Current - Continuous Drain (Id) @ 25°C.
Dual N-Channel MOSFET. •. Low On-Resistance. •. Very Low Gate Threshold Voltage, 1.0V Max. •. Low Input Capacitance. •. Fast Switching Speed.
DMN5L06VK-7-G ; Current - Continuous Drain (Id) @ 25°C · 280mA (Ta) ; Rds On (Max) @ Id, Vgs. 2Ohm @ 50mA, 5V ; Vgs(th) (Max) @ Id. 1.2V @ 250µA ; Gate Charge (Qg) ( ...
$0.11
Transistor Polarity:n Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:280Ma; On Resistance Rds(On):2Ohm; Transistor Mounting:surface ...
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Pack of 20 DMN5L06VK-7 MOSFET 2N-CH 50V 0.28A SOT-563 :ROHS · Condition. New. · Quantity. 1 available · Item Number. 144666061834 · Brand. N/A · UPC.
DMN5L06VK-7 is a power MOSFET array designed for switching and linear applications. It is suitable for high-current and high-voltage applications up to 600V.
Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed
Download the DMN5L06VK-7 datasheet from Diodes Inc.. Transistor MOSFET Array Dual N-CH 50V 280mA 6-Pin SOT-563 T/R.