Specifications ; Breakover Current IBO Max: 525 A ; Rated Repetitive Off-State Voltage VDRM: 200 V ; Off-State Leakage Current @ VDRM IDRM: 20 uA ; Vf - Forward ...
Jun 26, 2019 · 200. mA. dV/dt. VD = 67 %, VDRM gate open. 125 °C. Min. 1000. V/µs. VTM. ITM = 100 A, tp = 380 μs. 25 °C. Max. 1.9. V. VTO threshold on-state ...
BTW67200 Datasheet. 238Kb/5P. Part #: BTW67. Manufacturer: STMicroelectronics. Description: 50A SCRs. 19 Results. Datasheet: 84Kb/6P.
GLASS PASSIVATED CHIP. □ HIGH STABILITY AND RELIABILITY. □ HIGH SURGE CAPABILITY . HIGH ON-STATE CURRENT. □ EASY MOUNTING (FAST-ON CONNECTIONS).