FEATURES. • Package type: leaded. • Package form: TO-18. • Dimensions (in mm): Ø 4.7. • High photo sensitivity. • High radiant sensitivity.
BPW77NA Datasheet - Vishay Semiconductors - Mouser Electronics
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Specifications ; Collector- Emitter Voltage VCEO Max: 70 V ; Collector-Emitter Breakdown Voltage: 70 V ; Collector-Emitter Saturation Voltage: 150 mV ; Dark Current ...
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BPW77NA ; Manufacturer. Vishay Semiconductor Opto Division ; Series. - ; Packaging. Bulk ; Part Status. Active ; Voltage - Collector Emitter Breakdown (Max). 70 V.
Silicon NPN Phototransistor, RoHS Compliant. vsh-img-product-image. FEATURES. Package type: leaded. Package form: TO-18. Dimensions (in mm): Ø 4.7 ...
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Description. TO-18 NPN silicon phototransistor, features: size: 4.69 mm diameter, collector-emitter, voltage: 70V, collector current: 50mA, wavelength: 850nm, ...
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BPW77NA ; Collector-Emitter Saturation Voltage, 150 mV ; Dark Current, 100 nA ; Pd - Power Dissipation, 250 mW ; Minimum Operating Temperature, - 40 C ; Maximum ...
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The BPW77NA is a Silicon NPN Phototransistor with high radiant sensitivity in hermetically sealed. It is sensitive to visible and near infrared radiation.
$2.43
BPW77NA Vishay Intertech $5.1753 - 50mA 70V 250mW 100nA 850nm TO-18 Phototransistors ROHS datasheet, price, inventory C3009068.
€3.07
Specifications ; Collector-Emitter Breakdown Voltage: 70 V ; Collector-Emitter Saturation Voltage: 150 mV ; Dark Current: 100 nA ; Pd - Power Dissipation: 250 mW.
