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Part Number: BLS6G2731S-120,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 2.7 to 3.1 GHz, 120 W, 13.5 dB, 32 V, LDMOS, ...
120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Features and benefits. Easy power control; Integrated ESD ...
$198.69
Order today, ships today. BLS6G2731S-120112 – RF Mosfet 32 V 100 mA 2.7GHz ~ 3.1GHz 13.5dB 120W SOT502B from Ampleon USA Inc.. Pricing and Availability on ...
Sep 1, 2015 · 1.2 Features. ▫ Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, ...
Part Number: BLS6G2731-120,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 2.7 to 3.1 GHz, 120 W, 13.5 dB, 32 V, LDMOS, ...
Missing: BLS6G2731S- | Show results with:BLS6G2731S-
Order NXP USA Inc. BLS6G2731S-120112 (2156-BLS6G2731S-120112-ND) at DigiKey. Check stock and pricing, view product specifications, and order online.
BLS6G2731S-120,112. Manufacturer Part #:, BLS6G2731S-120. Manufacturer: Ampleon (RMS). Quantity: Build to Order. Status: Active. Part Category: RF MOSFETs. Part ...
Buy BLS6G2731-120112 - Nxp - RF FET Transistor, 32 V, 33 A, 120 W, 2.7 GHz, 3.1 GHz, SOT-502B. Newark offers fast quotes, same day shipping, fast delivery, ...
Missing: BLS6G2731S- | Show results with:BLS6G2731S-
Pricing and availability from all the top distributors and hundreds more. View BLS6G2731S-120112 Nxp Semiconductors datasheet, CAD models, lifecycle, RoHS, ...
BLS6G2731S-120,112 · Ampleon USA Inc. RF FET LDMOS 60V 13.5DB SOT502B. Specifications. 13 Weeks. SOT-502B. YES. SILICON. Tray. 2008. Active. 1 (Unlimited).