Order today, ships today. BLS6G2731-6G,112 – RF Mosfet 32 V 25 mA 2.7GHz ~ 3.1GHz 15dB 6W CDFM2 from Ampleon USA Inc.. Pricing and Availability on millions ...
6 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.
Part Number: BLS6G2731-6G,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 2.7 to 3.1 GHz, 6 W, 15 dB, 32 V, LDMOS, SOT-975C.
Sep 1, 2015 · Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 25 mA, a tp of 100 μs and a δ of 10 ...
Ampleon BLS6G2731-6G,112. RF Power Transistor, 2.7 to 3.1 GHz, 6 W, 15 dB, 32 V, LDMOS ...
Field-effect transistor type: LDMOS. Package: SOT-975C. Drain to Source voltage: 60V. Continuous drain current: 3.5A. Drain to Source on-state resistance ...
$209.07
About this item ; Condition. New ; Quantity. 1 available ; Item Number. 284286522852 ; Brand. NXP Semiconductors BV ; MPN. BLS6G2731-120,112 ...
BLS6G2731-120 Price & Stock ; BLS6G2731-120, NXP, LDMOS S-band radar power transistor, 1180. 1: $220.869 ; BLS6G2731-120,112, Ampleon USA Inc. RF FET LDMOS 60V ...
BLS6G2731-6G. A&D. PH3134-25M. M/A-com. BLS6G2735L-30. A&D. PH3135-20M. M/A-com ... 112. Blister, tray. Air-Cavity Ceramic (ACC). 400. 118. Tape and reel. SOT467C.