140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
Sep 1, 2015 · 1.2 Features. ▫ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 ...
Part Number: BLF6G20LS-140,118 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 1.93 to 1.99 GHz, 140 W, 16.5 dB, 28 V, LDMOS, ...
BLF6G20LS-140,118 · Ampleon USA Inc. RF FET LDMOS 65V 16DB SOT502B. Specifications. SOT-502B. YES. SILICON. Tape & Reel (TR). 2009. Obsolete. 1 (Unlimited).
Ampleon USA Inc. BLF6G20LS-140,118 RF MOSFETs Transistors 16.5dB 35.5W 1.93GHz~1.99GHz 65V ; Drain Current-Max (Abs) (ID), 39A ; DS Breakdown Voltage-Min, 65V.
Feb 27, 2009 · 1.2 Features. □ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 ...
Transistor Application. AMPLIFIER ; Polarity/Channel Type. N-CHANNEL ; DS Breakdown Voltage-Min. 65 V ; FET Technology. METAL-OXIDE SEMICONDUCTOR ; Highest ...
Specifications of BLF6G20LS-140,118 ; Package / Case. SOT502B. Transistor Type ; Frequency. 1.93GHz. Gain ; Voltage - Rated. 65V. Current Rating ; Current - Test.
Delivery out within 48 hours. Original new and unused in factory package. 90 day guarantee to meet all new original factory specs fit form and function.
$44.77
BLF6G20LS-140,118 ; Configuration : Single ; Transistor Polarity : N-Channel ; Drain-Source Breakdown Voltage : 65 V ; Continuous Drain Current : 39 A ; Gate-Source ...