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BLF6G20LS-140,112 from www.ampleon.com
140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.
BLF6G20LS-140,112 ; Frequency. 1.93GHz ~ 1.99GHz ; Gain. 16.5dB ; Voltage - Test. 28 V ; Current Rating (Amps). 39A ; Noise Figure. -.
Sep 1, 2015 · 1.2 Features. ▫ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 ...
Comparison. BLF6G20LS-140,118 vs BLF6G20LS-140,112. Mfr. Part #. Manufacturer. Description. Datasheet. RoHS. Specifications. Package / Case. Surface Mount.
BLF6G20LS-140112 Specifications: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: ROHS COMPLIANT, CERAMIC PACKAGE-2 ...
Discrete Semiconductor Products | RF FETs, MOSFETs. Mfr Part #. Description. Stock. Package. Status. View Details. SOT502B. BLF6G20LS-110,118.
Feb 27, 2009 · 1.2 Features. □ Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 1000 ...
BLF6G20LS-140,112 500pcs New and Original in Stock, Find BLF6G20LS-140,112 Stock, Datasheet, PDF, Inventory at Ariat-Tech.com Online, Order BLF6G20LS-.
180 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Manufacturer: NXP Semiconductors. Datasheet:.
Part Number: BLF6G20LS-110,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 1.93 to 1.99 GHz, 110 W, 19 dB, 28 V, LDMOS, ...
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