45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features and benefits. Easy power control; Integrated ESD ...
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Order today, ships today. BLF6G10S-45112 – RF Mosfet 28 V 350 mA 922.5MHz ~ 957.5MHz 23dB 1W CDFM2 from Ampleon USA Inc.. Pricing and Availability on ...
Part Number: BLF6G10S-45,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 0.92 to 0.96 GHz, 45 W, 23 dB, 28 V, LDMOS, SOT-608B.
Part Number: BLF6G10-45,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 0.92 to 0.96 GHz, 45 W, 22.5 dB, 28 V, LDMOS, SOT-608A.
Missing: BLF6G10S- | Show results with:BLF6G10S-
Sep 1, 2015 · 1.2 Features and benefits. ▫ Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a.
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Specifications ; Id - Continuous Drain Current: 13 A ; Vds - Drain-Source Breakdown Voltage: 65 V ; Rds On - Drain-Source Resistance: 200 mOhms ; Minimum Operating ...
Missing: BLF6G10S- | Show results with:BLF6G10S-
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(432) · Free 5-day delivery
The Ampleon USA Inc. BLF6G10S-45,112 is an LDMOS transistor designed for high-power linear and CDM applications in the 922.5 MHz to 957.5 MHz frequency range.
30-day returns
Order today, ships today. BLF6G10-45112 – RF Mosfet 28 V 350 mA 922.5MHz ~ 957.5MHz 22.5dB 1W CDFM2 from Ampleon USA Inc.. Pricing and Availability on ...
Missing: BLF6G10S- | Show results with:BLF6G10S-
Rating
(1) · $35 3–7 day delivery
BLF6G10S-45112 datasheet PDF download, Ampleon USA Inc. Transistors - FETs, MOSFETs - RF BLF6G10S-45112 Specifications: .
BLF6G10S-45,112 is a Transistors - FETs, MOSFETs - RF, Buffer Amps, Designed and produced by Ampleon USA Inc.. The BLF6G10S-45,112 produced by Ampleon USA ...