×
Including results for BLF6G10LS-200RN,112
Search only for BLF6G10LS-200R,112
1.2 Features. □ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA:.
Sep 1, 2015 · 200 W LDMOS power transistor for base station applications at frequencies from. 700 MHz to 1000 MHz. [1]. Test signal: 3GPP; test model 1; 64 ...
Missing: 200R, | Show results with:200R,
Allicdata provide the fastest source for BLF6G10LS-200R,112 datasheets,Photos,Price and stock,You can download Free 8 Million PDF.
$87.70
Nov 30, 2023 · BLF6G10LS-200RN,11 Ampleon USA datasheet PDF, 12 pages, view BLF6G10LS-200RN,11 Specifications online, Trans RF MOSFET N-CH 65V 49A 3Pin ...
BLF6G10LS-200R,112 from www.datasheet.hk
40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor, NXP Semiconductors N.V.. BLF871S112 ...
200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
Missing: 112 | Show results with:112
View BLF6G10LS-200RN by Ampleon USA Inc. datasheet for technical specifications, dimensions and more at DigiKey.
200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.. Table 1. Typical performance Typical RF performance at ...
Missing: 200R, | Show results with:200R,
BLF6G10-200RN,112 Specifications: Transistor Type: LDMOS ; Voltage - Rated: 65V ; Current Rating: 49A ; Noise Figure: - ; Frequency: 871.5MHz ~ 891.5MHz ...