Part Number: BLF6G10LS-135R,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, LDMOS. Design Information. * Project:.
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BLF6G10LS-135R,112 ; Frequency. 871.5MHz ~ 891.5MHz ; Gain. 21dB ; Voltage - Test. 28 V ; Current Rating (Amps). 32A.
Sep 1, 2015 · 1.2 Features. ▫ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 950 mA:.
Part Type, RF Transistors ; Product Family, Discretes ; Base Part Number, BLF6G10LS-135R ; EOL Date, 01/01/0001 00:00:00 ; Mfr. Cage Code, NXP.
BLF6G10LS-135R,112 Specifications: Polarity: N-Channel ; Operating Mode: Enhancement ; V(BR)DSS: 65 volts ; Package Type: ROHS COMPLIANT, CERAMIC PACKAGE-2 ...
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Dec 1, 2023 · BLF6G10LS-135R,112 NXP datasheet PDF, 100 pages, view BLF6G10LS-135R,112 Specifications online, Trans RF MOSFET N-CH 65V 32A 3Pin SOT-502B ...
135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features and benefits. Easy power control; Integrated ESD ...
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Quick Details ; Configuration: standard ; Voltage - Cutoff (VGS off) @ Id: standard ; Input Capacitance (Cies) @ Vce: standard ; Input Capacitance (Ciss) (Max) @ ...
Download the BLF6G10LS-135R112 datasheet from Nexperia. Transistor Uhf Band, Si, N-channel, Rf Power, Mosfet, Rohs Compliant, Ceramic PACKAGE-2, ...
Specifications of BLF6G10LS-135R,112 ; Package / Case. SOT502B. Transistor Type ; Frequency. 871.5MHz. Gain ; Voltage - Rated. 65V. Current Rating ; Current - Test.