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160 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features and benefits. Easy power control; Integrated ESD ...
Missing: 160RN2C112 | Show results with:160RN2C112
BLF6G10-160RN,112 ; Frequency. 922.5MHz ~ 957.5MHz ; Gain. 22.5dB ; Voltage - Test. 32 V ; Current Rating (Amps). 39A ; Noise Figure. -.
Missing: 160RN2C112 | Show results with:160RN2C112
Buy BLF6G10-160RN,112 with fast, free shipping on qualifying orders. View datasheets, stock and pricing, or find other RF FETs.
Missing: 160RN2C112 | Show results with:160RN2C112
BLF6G10-160RN2C112 from www.digikey.gr
Order today, ships today. BLF6G10-160RN,112 – RF Mosfet 32 V 1.2 A 922.5MHz ~ 957.5MHz 22.5dB 32W SOT502A from Ampleon USA Inc.. Pricing and Availability on ...
Missing: 160RN2C112 | Show results with:160RN2C112
45 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features and benefits. Easy power control; Integrated ESD ...
Missing: 160RN2C112 | Show results with:160RN2C112
Specifications ; Id - Continuous Drain Current: 13 A ; Vds - Drain-Source Breakdown Voltage: 65 V ; Rds On - Drain-Source Resistance: 200 mOhms ; Minimum Operating ...
Missing: 160RN2C112 | Show results with:160RN2C112
BLF6G10-160RN,112 Specifications: Transistor Type: LDMOS ; Voltage - Rated: 65V ; Current Rating: 39A ; Noise Figure: - ; Frequency: 922.5MHz ~ 957.5MHz ...
Missing: 160RN2C112 | Show results with:160RN2C112
BLF6G10-160RN,112 ; Category, Discrete Semiconductor Products Transistors FETs, MOSFETs RF FETs, MOSFETs ; Product Status, Obsolete ; Mounting Type, Chassis Mount.
Missing: 160RN2C112 | Show results with:160RN2C112
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