€17.66
100%Original: BLF4G22S-100 BLF4G22LS-100 BLF4G22S-100,112 - RF Mosfet LDMOS 28V 900mA 13.5dB 25W 2.11GHz ~ 2.17GHz SOT502B · Max. Reverse Current · Max. Forward ...
The BLF4G22S-100,112 is a reliable, high-performance RF MOSFET transistor. Its use in telecommunications, broadcasting and audio components makes it an ideal ...
[PDF] BLF4G22-100; BLF4G22S-100 UHF power LDMOS ... - rxelectronics.
www.rxelectronics.sg › datasheet
Jan 10, 2006 · 1.2 Features s Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an IDq of. 900 mA: x Load power = 25 W (AV).
R$96.24
Buy 100%Original: BLF4G22S-100 BLF4G22LS-100 BLF4G22S-100112 - RF Mosfet LDMOS 28V 900mA 13.5dB 25W 2.11GHz ~ 2.17GHz SOT502B at Aliexpress for .
BLF4G22S-100112 Specifications: Transistor Type: LDMOS ; Voltage - Rated: 65V ; Current Rating: 12A ; Noise Figure: - ; Frequency: 2.11GHz ; Gain: 13.5dB ...
Jan 10, 2006 · 1.2 Features s Typical 2-Carrier W-CDMA performance at a supply voltage of 28 V and an IDq of. 900 mA: x Load power = 25 W (AV).
Mfr Part Number. BLF4G22S-100,112 ; Description. FET RF 65V 2.17GHZ SOT502B ; Technology. LDMOS ; Configuration. Standard ; Frequency. 2.11GHz ~ 2.17GHz.
Manufacturer: NXP Semiconductors • RoHS/pb-free: RoHS Pb-free • Transistor Type: LDMOS • Frequency: 2.11GHz • Gain: 13.5dB • Voltage - Rated: 65V • Current ...
BLF4G22S-100,112 Specification Parameters · RoHS Status: ROHS3 Compliant · Number of Terminations: 2 · Number of Elements: 1 · Surface Mount: YES · Terminal Position ...
