Order today, ships today. BLF4G20S-110B,112 – RF Mosfet 28 V 700 mA 1.93GHz ~ 1.99GHz 13.5dB 100W SOT502B from NXP USA Inc.. Pricing and Availability on ...
Part Number: BLF4G20S-110B,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, LDMOS. Design Information. * Project: * Application:.
BLF4G20-110B,112 Specifications: Transistor Type: LDMOS ; Voltage - Rated: 65V ; Current Rating: 12A ; Noise Figure: - ; Frequency: 1.93GHz ; Gain: 13.5dB ...
Manufacturer: NXP Semiconductors • RoHS/pb-free: RoHS Pb-free • Transistor Type: LDMOS • Frequency: 1.93GHz • Gain: 13.5dB • Voltage - Rated: 65V • Current ...
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BLF4G20-110B,112 1.2 Featuresn Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, asupply voltage of 28 V and an IDq of 650 mA:u Lo.
Missing: BLF4G20S- | Show results with:BLF4G20S-
Part NumberBLF4G20S-110B,112; ManufacturerFreescale / NXP Semiconductors; DescriptionFET RF 65V 1.99GHZ SOT502B; Category45; Part Status0 pcs Stock ...
Jan 23, 2006 · 1.2 Features s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA:.
Missing: 112 | Show results with:112