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Order today, ships today. BLF4G20LS-110B,112 – RF Mosfet 28 V 650 mA 1.93GHz ~ 1.99GHz 13.4dB 100W SOT502B from NXP USA Inc.. Pricing and Availability on ...
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BLF4G20LS-110B NXP Semiconductors RF MOSFET Transistors LDMOS TNS datasheet ... 15 V. Width: 9.91 mm. Part # Aliases: BLF4G20LS-110B,112. Products found: To ...
BLF4G20LS-110B,112 - RF MOSFET Transistors - Ovaga Technologies
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Ovaga has a large stock of BLF4G20LS-110B,112 RF MOSFET Transistors from NXP and we guarantee that they are original, brand new parts sourced directly from NXP ...
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Product Specification:The condition is new. The supply voltage is international standard. The operating temperature is international standard. The application ...
15-day returns In stock
Buy 100%Original: BLF4G20LS-110B BLF4G20LS-110B,112 - RF Mosfet LDMOS 28V 650mA 1.93GHz-1.99GHz 13.4dB 100W SOT502B at Aliexpress for .
BLF4G20LS-110B,112 ; Packaging:Tray ; Part Status:Obsolete ; Transistor Type:LDMOS ; Frequency:1.93GHz ~ 1.99GHz ; Gain:13.4dB ...
Jan 10, 2006 · 1.2 Features s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA:.
IC-BLF4G20LS-110B,112 ; FET Type : LDMOS ; Technology : 65V ; Drain to Source Voltage (Vdss) : 28V ; Current - Continuous Drain (Id) @ 25°C : 12A ; Drive Voltage ( ...
Configuration : Single, Transistor Polarity : ; Drain-Source Breakdown Voltage : 65 V · Continuous Drain Current : ; Gate-Source Breakdown Voltage : 15 V · Maximum ...
Discrete Semiconductor Products | RF FETs, MOSFETs ; RF MOSFET LDMOS 28V SOT502B. BLF4G20LS-110B,112. RF MOSFET LDMOS 28V SOT502B. RF MOSFET LDMOS 28V SOT502B, 0.