Part Number: BLF4G20-110B,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 1.93 to 1.99 GHz, 110 W, 13.8 dB, 28 V, LDMOS, ...
Specifications ; Transistor Polarity: N-Channel ; Technology: Si ; Id - Continuous Drain Current: 12 A ; Vds - Drain-Source Breakdown Voltage: 65 V.
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BLF4G20-110B,112 1.2 Featuresn Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, asupply voltage of 28 V and an IDq of 650 mA:u Lo.
New Original BLF4G20-110B,112 LDMOST electronic components Support BOM Fast delivery ; Variations. Package: 1,D/C: 1. Original standard. NEW ; Customizations.
Download NXP Semiconductors BLF4G20-110B,112 pdf datasheet file.
Global distributor of NXP Semiconductors + BLF4G20-110B,112 + FET RF 65V 1.99GHZ SOT502A, Stock: Yes, shipping: Can Ship Immediately.