Order today, ships today. BLF4G20-110B,112 – RF Mosfet 28 V 700 mA 1.93GHz ~ 1.99GHz 13.5dB 100W LDMOST from NXP USA Inc.. Pricing and Availability on ...
Part Number: BLF4G20-110B,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 1.93 to 1.99 GHz, 110 W, 13.8 dB, 28 V, LDMOS, ...
Specifications ; Height: 4.72 mm ; Length: 20.02 mm ; Product Type: RF MOSFET Transistors ; Rise Time: 22 ns.
Order today, ships today. BLF4G20S-110B,112 – RF Mosfet 28 V 700 mA 1.93GHz ~ 1.99GHz 13.5dB 100W SOT502B from NXP USA Inc.. Pricing and Availability on ...
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OVAGA has a stock of 8860 brand new original NXP USA Inc. BLF4G20-110B,112 parts with quality assurance, and can provide test reports.
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BLF4G20-110B,112 1.2 Featuresn Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, asupply voltage of 28 V and an IDq of 650 mA:u Lo.
BLF4G20-110B,112 Specifications: Transistor Type: LDMOS ; Voltage - Rated: 65V ; Current Rating: 12A ; Noise Figure: - ; Frequency: 1.93GHz ; Gain: 13.5dB ...
New Original BLF4G20-110B,112 LDMOST electronic components Support BOM Fast delivery ; Variations. Package: 1,D/C: 1. Original standard. NEW ; Customizations.
1.2 Features s Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: x Load power = 48 W (AV).
