Part Number: BLF4G10LS-120,112 Manufacturer: Ampleon USA Inc. Product Description: RF Power Transistor, 0.8 to 1 GHz, 120 W, 19 dB, 28 V, LDMOS, SOT502B.

Jan 10, 2006 · 1.2 Features s Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA.

LDMOS FET. Type: RF Power MOSFET. Vgs - Gate-Source Voltage: 15 V. Width: 9.91 mm. Part # Aliases: BLF4G10LS-120,112. Products found: To show similar products ...

Manufacturer, NXP USA Inc. Series, -. Transistor Type, LDMOS. Frequency, 920MHz ~ 960MHz. Gain, 19dB. Voltage - Test, 28V. Current Rating (Amps), 12A.

New Original BLF4G10LS-120,112 SOT502B electronic components Support BOM Fast delivery ; Variations. Specification: 1. SOT-502 ; Customizations. Customized logo.

Part No. BLF4G10LS-120,112. Kaihanga, NXP Semiconductors / Freescale. Whakaahuatanga, FET RF 65V 960MHZ SOT502B. Whakahaere Toko Whakahaere / RoHS Tūnga ...

BLF4G10LS-120112 Specifications: Transistor Type: LDMOS ; Voltage - Rated: 65V ; Current Rating: 12A ; Noise Figure: - ; Frequency: 920MHz ; Gain: 19dB ...

BLF4G10LS-120,112 · NXP Semiconductors / Freescale · FET RF 65V 960MHZ SOT502B · Lead free / RoHS compliant ...

Part Number: BLF4G10LS-120,112 ; Manufacturer: NXP Semiconductors / Freescale ; Description: FET RF 65V 960MHZ SOT502B ; RoHS Status: Lead free / RoHS Compliant.