BG 3130R E6327 Infineon Technologies Transistores de efecto de campo de semiconductor de óxido metálico (MOSFET) y radiofrecuencia (RF) Silicon N-Channel ...
Product BG 3230 E6327 description · Manufacturer: Infineon Technologies · Description: MOSFET N-CH DUAL 8V SOT-363 · Qty In-Stock: click box for stock check · Qty ...
BG 3130R E6327 Infineon Technologies VF MOSFET Silicon N-Channel MOSFET Tetrode katalogový list, zásoby a ceny.
BG 3130 E6327 Specifications: Transistor Type: 2 N-Channel (Dual) ; Voltage - Rated: 8V ; Current Rating: 25mA ; Noise Figure: 1.3dB ; Frequency: 800MHz ...
Product BG 3123 E6327 description · Manufacturer: Infineon Technologies · Description: MOSFET N-CH DUAL 8V 25MA SOT-363 · Qty In-Stock: click box for stock check ...
Order today, ships today. BG3130RE6327BTSA1 – RF Mosfet 5 V 14 mA 800MHz 24dB PG-SOT363-PO from Infineon Technologies. Pricing and Availability on millions ...
BG 3123 E6327 Specifications: Transistor Type: 2 N-Channel (Dual) ; Voltage - Rated: 8V ; Current Rating: 25mA, 20mA ; Noise Figure: 1.8dB ; Frequency: ...
BG 3230 E6327 ; Product Status. Obsolete ; Technology. MOSFET ; Configuration. 2 N-Channel (Dual) ; Frequency. 800MHz ; Gain. 24dB.
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BG 3130R E6327, Infineon Technologies, MOSFET N-CH DUAL 8V SOT-363R. Transistor Type: 2 N-Channel (Dual) · Frequency: 800MHz · Gain: 24dB · Voltage - Rated: 8V ...
Mar 31, 2012 · BG 3130R E6327. SP000014450. PG-SOT363-6. 31.03.2012. 30.09.2012 BG 3130R H6327. SP000753496. PG-SOT363-6. BG 3430R E6327. SP000240529. PG- ...