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BFG67/X,215 from www.mouser.com
Specifications ; Technology: Si ; Transistor Polarity: NPN ; Operating Frequency: 8 GHz ; Collector- Emitter Voltage VCEO Max: 10 V.
BFG67/X,215 from www.digikey.com
Order today, ships today. BFG67/X,215 – RF Transistor NPN 10V 50mA 8GHz 380mW Surface Mount SOT-143B from NXP USA Inc.. Pricing and Availability on millions ...
BFG67,215 ; Part Status. Obsolete ; Transistor Type. NPN ; Voltage - Collector Emitter Breakdown (Max). 10V ; Frequency - Transition. 8GHz ; Noise Figure (dB Typ @ f).
BFG67/X,215 from store.nacsemi.com
Collector-emitter Voltage-Max, 10 ; Configuration, SINGLE ; DC Current Gain-Min (hFE), 60 ; Highest Frequency Band, L BAND.
Download the BFG67/X,215 datasheet from NXP Semiconductors. Trans GP BJT NPN 10V 0.05A 4-Pin(3+Tab) SOT-143B T/R.
BFG67/X,215 from www.utsource.net
UTSOURCE provides BFG67/X,215 with lower prices and higher quality through multiple electronic component sellers, and we also provide BFG67/X,215 datasheets ...
NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning (BFG67/X).
BFG67/X,215 from www.ovaga.com
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DESCRIPTIONNPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter pinning ( ...
Nov 23, 2007 · NPN silicon transistor in a 4-pin, dual-emitter SOT143B plastic package. Available with in-line emitter pinning (BFG67) and cross emitter.