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BFG410W,115 NXP Semiconductors RF Bipolar Transistors TAPE-7 TNS-RFSS datasheet, inventory, & pricing.
plastic surface-mounted package; reverse pinning; 4 leads. Buy Options; Operating Features; Environmental; Quality; Shipping; Discontinuance and Replacement ...
BFG410W,115 NXP USA Inc. | Discrete Semiconductor Products
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BFG410W,115 ; Voltage - Collector Emitter Breakdown (Max). 4.5V ; Frequency - Transition. 22GHz ; Noise Figure (dB Typ @ f). 0.9dB ~ 1.2dB @ 900MHz ~ 2GHz ; Gain.
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This is a 5 NXP NPN 22 GHz Wideband Transistor BFG410W+115, in good condition, ready to be use. Polarity: NPN. GUM [typ] (dB): 21. IC [max] (mA): 12.
Download the BFG410W,115 datasheet from NXP Semiconductors. Trans RF BJT NPN 4.5V 0.012A 54mW 4-Pin(3+Tab) CMPAK T/R.
BFG410W,115. As a proactive and sustainable company, NXP has decided to publish chemical content information of its product portfolio through direct ...
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BFG410W,115 ; Collector-Emitter Voltage: 4.5 V ; Emitter-Base Voltage: 1 V ; Frequency: 22000 MHz ; Power Dissipation: 0.054 W ; Mounting: Surface Mount.
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BFG21W,115 vs BFG410W,115 comparison: BFG21W,115 NXP BFG21W,115.RF WIDEBAND TRANSISTOR, NPN, 4.5V, 18GHZ, 4-SOT-343R, BFG410W,115 RF TRANS NPN 4.5V 22GHZ ...
Mar 11, 1998 · SYMBOL. PARAMETER. CONDITIONS. MIN. TYP. MAX. UNIT. VCBO collector-base voltage open emitter. -. -. 10. V. VCEO.
