V(BR)GSS. Gate-Source Breakdown Voltage. IG = 1.0 µA, VDS = 0. 30. V. IGSS. Gate Reverse Current. VGS = - 20 V, VDS = 0.

BF244A / BF244B / BF244C. PD. Total Device Dissipation. Derate above 25°C. 350 ... BF244A / BF244B / BF244C. N-Channel RF Amplifier. (continued). Page 4. BF244A ...

Order today, ships today. BF244C – RF Mosfet 15 V 100MHz TO-92-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key ...

This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance.

BF244C MOSFET. Datasheet pdf. Equivalent. Type Designator: BF244C Type of Transistor: JFET Type of Control Channel: N -Channel

V(BR)GSS. Gate-Source Breakdown Voltage. IG = 1.0 µA, VDS = 0. 30. V. IGSS. Gate Reverse Current. VGS = - 20 V, VDS = 0.

Part #: BF244C. Download. File Size: 120Kbytes. Page: 2 Pages. Description: JFET PRO ELECTRON SERIES. Manufacturer: National Semiconductor (TI).

BF244A / BF244B / BF244C. PD. Total Device Dissipation. Derate above 25°C. 350. 2.8. mW. mW/°C. RθJC. Thermal Resistance, Junction to Case. 125. °C/W. RθJA.

BF244C alternative parts: 2N3819 ; Element Configuration, Single, Single ; Power Dissipation, 350mW, 360mW ; Drain to Source Voltage (Vdss), 30V, 25V ; Transistor ...