BCR 116T E6327 ; Transistor Type. NPN - Pre-Biased ; Current - Collector (Ic) (Max). 100 mA ; Voltage - Collector Emitter Breakdown (Max). 50 V ; Resistor - Base ( ...
Order today, ships today. BCR 116T E6327 – Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 MHz 250 mW Surface Mount PG-SC75-3D from ...
BCR 116T E6327 Specifications: Transistor Type: NPN - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ...
Vce Saturation (Max) @ Ib, Ic, 300mV @ 500碌A, 10mA. Resistor - Base (R1) (Ohms), 4.7k. Power - Max, 250mW. Resistor - Emitter Base (R2) (Ohms), 47k.
Quick Details ; Model Number: BCR 116T E6327 ; Voltage - Breakdown: standard ; Cross Reference: - ; Power (Watts):, standard ; RF Frequency: -.
$0.36 In stock
BCR 116 E6327 Infineon Technologies Digital Transistors NPN Silicon Digital TRANSISTOR datasheet, inventory, & pricing.
Missing: 116T | Show results with:116T
PDF Datasheet Preview. BCR116... NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit
Manufacturer, Infineon Technologies. Part Number, BCR 116T E6327. Product Overview, TRANS PREBIAS NPN 250MW SC75. Other ...
The BCR 320U E6327 / BCR 321U E6327 provides a low-cost solution for driving 0.5 W LEDs with a typical LED current of 150 mA to 200 mA. Internal breakdown ...
BCR 116T E6327 ; Voltage – Collector Emitter, 50V ; Vce Saturation (Max) @ Ib, Ic, 300mV @ 500µA, 10mA ; Transistor Type, NPN – Pre-Biased ; Supplier Device Package ...