BCR 108 B6327 ; Voltage - Collector Emitter Breakdown (Max). 50 V ; Resistor - Base (R1). 2.2 kOhms ; Resistor - Emitter Base (R2). 47 kOhms ; DC Current Gain (hFE) ...
Aug 19, 2011 · NPN Silicon Digital Transistor. • Switching circuit, inverter, interface circuit, driver circuit. • Built in bias resistor (R1=2.2 kΩ, ...
Internal Part Number, EIS-BCR 108 B6327 ; Lead Free Status / RoHS Status, Lead free / RoHS Compliant ; Moisture Sensitivity Level (MSL), 1 (Unlimited) ; Production ...
Technical Details. Series:--; Packaging:Tape & Reel (TR); Part Status:Obsolete; Transistor Type:NPN - Pre-Biased; Current - Collector (Ic) (Max):100mA ...
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BCR 108 E6327 Infineon Technologies Digital Transistors AF TRANS DIGITAL BJT NPN 50V 100MA datasheet, inventory, & pricing.
Missing: B6327 | Show results with:B6327
bcr 108 b6327 — transistor npn dgtl sot-23 - ChipFind.net
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BCR 108 B6327 — TRANSISTOR NPN DGTL SOT-23 ; Resistor - Emitter Base (R2) (Ohms), 47K ; DC Current Gain (hFE) (Min) @ Ic, Vce, 70 @ 5mA, 5V ; Vce Saturation (Max) ...
BCR 108 B6327 Infineon Technologies ; Mounting Type: Surface Mount ; Transistor Type: NPN - Pre-Biased ; Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
BCR 148 B6327 Specifications: Transistor Type: NPN - Pre-Biased ; Voltage - Collector Emitter Breakdown (Max): 50V ; Current - Collector (Ic) (Max): 100mA ...
Part Number: BCR 108 B6327 ; Description: TRANSISTOR NPN DGTL SOT-23 ; Manufacturer: Infineon Technologies ; Datasheet: BCR_108S_E6327.pdf (12 pages).
BCR 108T E6327, Infineon Technologies, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 170 MHz 250 mW Surface Mount PG-SC-75 ; Tape & Reel (TR) ...