BCR 10PN E6327 Infineon Technologies Digital Transistors NPN/PNP Silicn Digtl TRANSISTOR ARRAY datasheet, inventory, & pricing.
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-PO. Customer Reference. Datasheet.
BCR 10PN E6327 Infineon Technologies 數位電晶體NPN/PNP Silicn Digtl TRANSISTOR ARRAY 資料表、庫存和定價。
Package / Case, SOT-963. Vce Saturation (Max) @ Ib, Ic, 250mV @ 300µA, 10mA. Transistor Type, 2 PNP - Pre-Biased (Dual). Supplier Device Package, SOT-963.
BCR 108T E6327 ; Detailed Description. Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 170 MHz 250 mW Surface Mount PG-SC75-3D ; Datasheet.
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BCR 108T E6327, Infineon Technologies, Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 170 MHz 250 mW Surface Mount PG-SC-75 ; Tape & Reel (TR) ...
Specifications of BCR 191 E6327 ; Package / Case. TO-236-3, SC-59, SOT-23-3. Transistor Type. PNP - Pre-Biased ; Current - Collector (ic) (max). 100mA. Voltage - ...
Resistor - Base (R1) (Ohms), 10k. Package / Case, 6-TSSOP, SC-88, SOT-363. Transistor Type, 1 NPN, 1 PNP - Pre-Biased (Dual).
Specifications. Transistor Type, 2 NPN (Dual). Voltage - Collector Emitter Breakdown (Max), 65V. Current - Collector (Ic) (Max), 100mA. Power - Max, 250mW.